Power Integrations, a renowned leader in high-voltage integrated circuits for energy-efficient power conversion, has recently unveiled a groundbreaking 1700 V Gallium Nitride (GaN) switcher IC, solidifying its position as a pioneer in power semiconductor innovation. This new device, part of the InnoMuxâ„¢-2 family of single-stage, multi-output offline power supply ICs, showcases the industry’s first 1700 V GaN switch, representing a significant milestone in the evolution of GaN-based power devices.
Designed to cater to high-voltage applications such as automotive chargers, solar inverters, three-phase meters, and various industrial power systems, the 1700 V InnoMux-2 IC offers up to three independently regulated outputs with exceptional accuracy within one percent. This makes it an ideal solution for applications requiring high efficiency and reliable power conversion. Operating with an input voltage of up to 1000 VDC in a flyback configuration, the IC ensures superior performance and efficiency. With the capability to achieve over 90% efficiency, the device eliminates the need for additional post-regulators, thereby enhancing overall system efficiency by approximately 10%.
The introduction of the 1700 V GaN switcher IC sets a new standard for GaN technology, building on the success of Power Integrations’ previous GaN devices, including the 900 V and 1250 V products launched in 2023. The company’s proprietary PowiGaNâ„¢ technology has played a pivotal role in the development of these high-performance devices, enabling them to operate at significantly higher voltage levels than previous GaN-based products.
Radu Barsan, the vice president of technology at Power Integrations, expressed his excitement about the rapid advancements in GaN technology. He mentioned, “Our rapid pace of GaN development has delivered three world-first voltage ratings in less than two years: 900 V, 1250 V, and now 1700 V.” The new InnoMux-2 ICs combine 1700 V GaN with several recent innovations, including independent, accurate, multi-output regulation, FluxLinkâ„¢ for secondary-side regulation (SSR) digital isolation communications technology, and zero-voltage switching (ZVS) without an active-clamp, which virtually eliminates switching losses.
These technological advancements in GaN offer several key benefits, such as reduced size and weight of power supplies, higher power density, and improved system efficiency, making GaN a compelling alternative to traditional silicon-based power devices. As the demand for energy-efficient power systems continues to rise across industries, Power Integrations’ new device establishes a new benchmark in the semiconductor industry.
One significant aspect of Power Integrations’ 1700 V GaN device is its potential to replace conventional silicon carbide (SiC) transistors in numerous power supply applications. While SiC transistors excel in high-power applications requiring extreme thermal performance, GaN’s superior switching capabilities and higher efficiency are driving its increasing adoption in power conversion systems. GaN also offers cost-effectiveness advantages over SiC, making it a more affordable option for many applications.
Ezgi Dogmus, the activity manager for compound semiconductors at Yole Group, stated, “The 1700 V rating is substantially higher than any other commercially available GaN HEMT that we are aware of. The Power GaN device market is projected to reach $2 billion by the end of the decade, expanding across various application spaces with potentially attractive cost advantages over SiC.”
The integration of GaN-based devices into power systems presents the opportunity for significant size and weight reductions in power supplies, a crucial feature in industrial and automotive applications where space and efficiency are crucial. Automotive manufacturers are increasingly turning to GaN technology to enhance the efficiency of electric vehicle (EV) chargers, inverters, and other essential power electronics.
